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PD -97551
AUTOMOTIVE GRADE * Advanced Process Technology * Optimized for Class D Audio Amplifier and High Speed * * * * * * * * *
Switching Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into an 8 Load Dual Sided Cooling 175C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free
SB SC M2 M4
DirectFET Power MOSFET V(BR)DSS 60V RDS(on) typ. 27m: max. RG (typical) Qg (typical) 36m: 3.5: 7.3nC
AUIRF7640S2TR AUIRF7640S2TR1
Applicable DirectFET Outline and Substrate Outline
SB
DirectFET ISOMETRIC
L4
L6
L8
Description
The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier and other high speed switching systems.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C ID @ TA = 25C ID @ TC = 25C IDM PD @TC = 25C PD @TA = 25C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)e Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and Storage Temperature Range
Max.
60 20 21 15 5.8 77 84 30 2.4 38 57 See Fig.18a, 18b, 15, 16 270 -55 to + 175
Units
V
A
f e
f
W mJ A mJ C
g
d
Thermal Resistance
RJA RJA RJA RJ-Can RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Can
fl
e j k
Parameter
Typ.
--- 12.5 20 --- 1.4 0.2
Max.
63 --- --- 5.0 ---
Units
C/W
Junction-to-PCB Mounted
HEXFET(R) is a registered trademark of International Rectifier.
Linear Derating Factor fl
W/C
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1
8/16/10
AUIRF7640S2TR/TR1
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ gfs RG IDSS IGSS
Static @ TJ = 25C (unless otherwise specified)
Min.
60 --- --- 3.0 --- 9.3
---
Typ. Max. Units
--- 0.1 27 4.0 -11 --- 3.5 --- --- --- --- 7.3 1.5 0.9 3.0 1.9 3.9 5.3 4.0 12 6.3 6.2 450 160 48 610 120
Conditions
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Forward Transconductance Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance
--- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
VGS = 0V, ID = 250A --- V --- V/C Reference to 25C, ID = 1mA 36 m VGS = 10V, ID = 13A VDS = VGS, ID = 25A 5.0 V --- mV/C VDS = 50V, ID = 13A --- S 5.0 5 A VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125C 250 VGS = 20V 100 nA VGS = -20V -100
i
Dynamic Characteristics @ TJ = 25C (unless otherwise stated)
Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Coss Coss 11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- VDS = 30V VGS = 10V ID = 13A
See Fig. 6 and 17
nC
nC
ns
VDS = 16V, VGS = 0V VDD = 30V, VGS = 10VAi ID = 13A RG=6.8 VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 48V, f=1.0MHz
pF
Diode Characteristics @ TJ = 25C (unless otherwise stated)
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ag Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- --- 26 24 21 84 1.3 39 36 V ns nC A
Conditions
MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 13A, VGS = 0V TJ = 25C, IF = 13A, VDD = 25V di/dt = 100A/s
D
i
S
i
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
Notes through are on page 3
2
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AUIRF7640S2TR/TR1
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. DFET2 Class B AEC-Q101-002 Class 2 AEC-Q101-001 Charged Device Model Class IV AEC-Q101-005 Yes MSL1
Moisture Sensitivity Level Machine Model Human Body Model
ESD
RoHS Compliant
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25C, L = 0.944mH, RG = 25, IAS = 8.9A. Pulse width 400s; duty cycle 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R is measured at TJ of approximately 90C.
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AUIRF7640S2TR/TR1
100
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
100
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
1
BOTTOM
10
BOTTOM
0.1
1 5.0V
0.01 5.0V 0.001 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH
Tj = 25C
60s PULSE WIDTH
Tj = 175C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
) RDS(on), Drain-to -Source On Resistance (m
ID = 13A 80
( RDS(on), Drain-to -Source On Resistance m)
Fig 2. Typical Output Characteristics
100 Vgs = 10V 80
100
TJ = 125C
60 TJ = 125C
60
40
20 TJ = 25C 0 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
40
TJ = 25C
20 0 10 20 30 40 50 ID, Drain Current (A)
Fig 3. Typical On-Resistance vs. Gate Voltage
100
VGS, Gate -to -Source Voltage (V)
Fig 4. Typical On-Resistance vs. Drain Current
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 13A 2.0
ID, Drain-to-Source Current(A)
VGS = 10V
10
1
TJ = -40C TJ = 25C TJ = 175C
1.5
0.1 VDS = 25V 60s PULSE WIDTH 0.01 2 4 6 8 10 12 14
1.0
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
4
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AUIRF7640S2TR/TR1
6.5
VGS(th), Gate threshold Voltage (V)
100 TJ = -40C TJ = 25C TJ = 175C 10
5.5
4.5
3.5 ID = 25A ID = 250A ID = 1.0mA D = 1.0A
ISD, Reverse Drain Current (A)
1
2.5
VGS = 0V 0.1
1.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C )
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Threshold Voltage vs. Junction Temperature
18
Gfs , Forward Transconductance (S)
Fig 8. Typical Source-Drain Diode Forward Voltage
10000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
16 14
TJ = 25C
C, Capacitance (pF)
12 10 8 6 4 2 0 0 4 8 12 16 20 24 ID,Drain-to-Source Current (A) VDS = 5.0V 380s PULSE WIDTH TJ = 175C
1000 Ciss Coss 100 Crss
10 1 10 VDS, Drain-to-Source Voltage (V) 100
Fig 9. Typical Forward Transconductance Vs. Drain Current
14 ID= 13A
VGS, Gate-to-Source Voltage (V)
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
24
12 10 8 6 4 2 0 0 2
VDS= 80V VDS= 50V
ID, Drain Current (A)
20 16 12 8 4 0
VDS= 20V
4
6
8
10
25
50
75
100
125
150
175
QG, Total Gate Charge (nC)
TC , Case Temperature (C)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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AUIRF7640S2TR/TR1
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
EAS , Single Pulse Avalanche Energy (mJ)
1000
160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) ID 2.5A 4.8A BOTTOM 13A TOP
100 1msec 10 100sec
1 Tc = 25C Tj = 175C Single Pulse 0.1 0 1
DC
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 13. Maximum Safe Operating Area
10
Thermal Response ( Z thJC ) C/W
Fig 14. Maximum Avalanche Energy vs. Temperature
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01
R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.49687
i (sec)
0.000119 8.231486 0.018926 0.002741
J
0.00517 2.55852 1.94004
0.01 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1
0.001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
Avalanche Current (A)
10
0.01 0.05
1
0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C.
0.1 1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
6
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AUIRF7640S2TR/TR1
40
EAR , Avalanche Energy (mJ)
30
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 13A
20
10
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
V(BR)DSS tp
Fig 17. Maximum Avalanche Energy Vs. Temperature
15V
VDS
L
DRIVER
RG
20V
D.U.T
IAS tp
+ - VDD
VGS
A
0.01
I AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id Vds
L
0
DUT
20K 1K
S
VCC
Vgs
Vgs(th)
Fig 19a. Gate Charge Test Circuit
VDS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
Qgodr
Qgd
Qgs2 Qgs1
Fig 19b. Gate Charge Waveform
VDS
+
D.U.T.
-
V DD
90%
10% VGS
td(on) tr t d(off) tf
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
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AUIRF7640S2TR/TR1
DirectFET Auto Board Footprint, SB (Small Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
CL
G = GATE D = DRAIN S = SOURCE
D G D S
D
D
8
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AUIRF7640S2TR/TR1
DirectFET Auto Outline Dimension, SB Outline (Small Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
CODE A B C D E F G H J K L M P R METRIC MIN MAX 4.75 4.85 3.70 3.95 2.75 2.85 0.35 0.45 0.48 0.52 0.88 0.92 0.98 1.02 0.88 0.92 N/A N/A 0.95 1.05 1.85 1.95 0.68 0.74 0.08 0.17 0.02 0.08 IMPERIAL MIN MAX 0.187 0.191 0.146 0.156 0.108 0.112 0.014 0.018 0.019 0.020 0.035 0.036 0.039 0.040 0.035 0.036 N/A N/A 0.037 0.041 0.073 0.077 0.027 0.029 0.003 0.007 0.001 0.003
DirectFET Part Marking
"AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE
Line above the last character of the date code indicates "Lead-Free"
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AUIRF7640S2TR/TR1
Automotive DirectFET Tape & Reel Dimension (Showing component orientation).
F D
C
B
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as AUIRF7640S2TR). For 1000 parts on 7" reel, order AUIRF7640S2TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC CODE MIN MIN MAX MIN MIN MAX MAX MAX 12.992 6.9 A N.C 177.77 N.C 330.0 N.C N.C 0.795 0.75 B N.C 19.06 20.2 N.C N.C N.C C 0.504 0.53 0.50 13.5 12.8 0.520 13.2 12.8 D 0.059 0.059 N.C 1.5 1.5 N.C N.C N.C E 3.937 2.31 N.C 58.72 100.0 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 11.9 N.C 12.4 0.567 14.4 12.01 H 0.469 0.47 11.9 N.C 11.9 0.606 15.4 12.01
E
G
H
LOADED TAPE FEED DIRECTION
B
A
H
D
F
E
G
DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.311 0.319 8.10 7.90 0.154 4.10 3.90 0.161 0.469 0.484 12.30 11.90 0.215 5.55 5.45 0.219 0.158 4.00 0.165 4.20 0.205 0.197 5.20 5.00 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
10
C
A
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AUIRF7640S2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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